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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2579 DESCRIPTION With TO-3PN package High power dissipation High current capability APPLICATIONS For audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER INC Collector-base voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC VALUE 160 160 6 8 UNIT V V V A W ae ae Open emitter Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Open collector TC=25ae 80 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2579 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 160 V V(BR)CEO V(BR)EBO Collector-emitter breakdown voltage IC=10mA ;RBE= IE=5mA ; IC=0 160 V Emitter-base breakdown voltage 6 V ICBO Collector cut-off current VCB=160V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=3A ; VCE=4V 50 VCE(sat) Collector-emitter saturation voltage fT IN Transition frequency IC=5A ; IB=0.5A ANG CH MIC E SE IC=0.5A ; VCE=10V DUC ON 20 TOR 2.0 V MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2579 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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